FUNDAMENTAL ENERGY GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION SPECTRA.MONEMAR B.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 2; PP. 676-681; BIBL. 21 REF.Article

HIGH-RESOLUTION COMPOSITION PROFILING OF GAAS-AL_XGA_1-XAS DOUBLE-HETERO-LASER STRUCTURES WITH PHOTOLUMINESCENCE.MONEMAR B.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2922-2928; BIBL. 28 REF.Article

RED PAIR LUMINESCENCE IN GAP: CUMONEMAR B.1972; J. LUMINESC.; NETHERL.; DA. 1972; VOL. 5; NO 6; PP. 472-481; BIBL. 24 REF.Serial Issue

3th international conference on shallow impurities in semiconductors, Linköping, SWE, 10-12 August, 1988MONEMAR, B.Conference series - Institute of physics. 1989, Num 95, pp XI-579, issn 0305-2346, p. [590 p.]Conference Proceedings

PROPERTIES OF VPE-GROWN GAN DOPED WITH AL AND SOME IRON-GROUP METALSMONEMAR B; LAGERSTEDT O.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6480-6491; BIBL. 44 REF.Article

REEVALUATION OF BANDGAP AND FREE EXCITON BINDING ENERGY OF GAP.MONEMAR B; SAMUELSON L.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 3; PP. 165-167; BIBL. 17 REF.Article

VARIATION OF LATTICE PARAMETERS IN GAN WITH STOICHIOMETRY AND DOPINGLAGERSTEDT O; MONEMAR B.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 6; PP. 3064-3070; BIBL. 56 REF.Article

OPTICAL TRANSITIONS VIA THE DEEP O DONOR IN GAP. I: PHONON INTERACTION IN LOW-TEMPERATURE SPECTRAMONEMAR B; SAMUELSON L.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 2; PP. 809-829; BIBL. 95 REF.Article

OPTICAL CHARACTERIZATION OF DEEP O IMPLANTS IN GAAS.MONEMAR B; BLUM JM.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 4; PP. 1529-1537; BIBL. 63 REF.Article

OBSERVATION AND ANALYSIS OF VERY RAPID OPTICAL DEGRADATION OF GAAS/GAALAS DH LASER MATERIAL.MONEMAR B; WOOLHOUSE GR.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 605-607; BIBL. 12 REF.Article

Bound excitons in GaNMONEMAR, B.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 32, pp 7011-7026, issn 0953-8984Article

OPTICAL CHARACTERIZATION OF DEEP ENERGY LEVELS IN SEMICONDUCTORSMONEMAR B; GRIMMEISS HG.1982; PROG. CRYST. GROWTH CHARACT.; ISSN 501948; GBR; DA. 1982; VOL. 5; NO 1-2; PP. 47-88; BIBL. 108 REF.Article

OPTICAL TRANSITIONS VIA THE DEEP O DONOR IN GAP. II: TEMPERATURE DEPENDENCE OF CROSS SECTIONSSAMUELSON L; MONEMAR B.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 2; PP. 830-843; BIBL. 35 REF.Article

PROPERTIES OF ZN-DOPED VPE-GROWN GAN. I: LUMINESCENCE DATA IN RELATION TO DOPING CONDITIONSMONEMAR B; LAGERSTEDT O; GISLASON HP et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 625-639; BIBL. 51 REF.Article

PROPERTIES OF GAN TUNNELING MIS LIGHT-EMITTING DIODES.LAGERSTEDT O; MONEMAR B; GISLASON H et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2953-2957; BIBL. 16 REF.Article

SOME OPTICAL PROPERTIES OF THE AL_XGA_1-XAS ALLOY SYSTEM.MONEMAR B; SHIH KK; PETTIT GD et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2604-2613; BIBL. 73 REF.Article

SECONDARY DISLOCATION CLIMB DURING OPTICAL EXCITATION OF GAAS LASER MATERIALWOOLHOUSE GR; MONEMAR B; SERRANO CM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 94-97; BIBL. 22 REF.Article

PROPERTIES OF ZN-DOPED VPE-GROWN GAN. II: OPTICAL CROSS SECTIONSMONEMAR B; GISLASON HB; LAGERSTEDT O et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 640-649; BIBL. 20 REF.Article

Deep acceptorlike recombination in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonanceGODLEWSKI, M; MONEMAR, B.Journal of applied physics. 1988, Vol 64, Num 1, pp 200-206, issn 0021-8979Article

Electronic properties of a (Cu-Li)-related neutral complex defect with a bound exciton at 2.25 eV in GaPCHEN, W. M; MONEMAR, B.Physical review. B, Condensed matter. 1987, Vol 36, Num 15, pp 7948-7954, issn 0163-1829Article

Optically detected magnetic resonance in oxygen-doped GaPGODLEWSKI, M; MONEMAR, B.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2752-2755, issn 0163-1829Article

Optical study of complex formation in Ag-doped CdTeMONEMAR, B; MOLVA, E; LE SI DANG et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 1134-1145, issn 0163-1829Article

Role of free carrier in the application of optically detected magnetic resonance for studies of defects in siliconCHEN, W. M; MONEMAR, B.Applied physics. A, Solids and surfaces. 1991, Vol 53, Num 2, pp 130-135, issn 0721-7250Article

Electronic structure of the substitutional nitrogen NN₁ pair in GaP from photoluminescence excitation and Zeeman spectroscopyZHAO, Q. X; MONEMAR, B.Physical review. B, Condensed matter. 1988, Vol 38, Num 2, pp 1397-1405, issn 0163-1829Article

Effects of interlevel coupling on optically detected magnetic resonance spectra for complex defects in semidonductorsCHEN, W. M; MONEMAR, B.Physical review. B, Condensed matter. 1988, Vol 38, Num 17, pp 12660-12663, issn 0163-1829Article